Hardware1 hOctober 29, 2026, 14:40

Infineon wins EU funding for world's first 300mm GaN fab

The European Commission approved €319 million in Austrian grants for Infineon's €1.1 billion Empowering Fab project in Villach, which will host the world's first high-volume 300mm gallium nitride power semiconductor production. The larger wafers yield about 2.3 times more dies per wafer and aim to bring GaN to cost parity with silicon MOSFETs.

Tech Times

Open source

Infineon wins EU funding for world's first 300mm GaN fab

European Commission approved €319M in Austrian grants for Infineon
Empowering Fab project is valued at €1.1 billion
300mm wafers yield about 2.3x more dies than 200mm
Target is cost parity between GaN and silicon MOSFETs

#Infineon#GaN

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