NEMS-gated gain cell targets denser, more efficient embedded DRAM

Researchers from UC Berkeley, Samsung and Intel published a paper on a nanoelectromechanically gated gain-cell eDRAM. The design aims to fix limited retention, parasitic coupling and boosted write voltages in conventional gain cells.

• Paper appears in IEEE JXCDC, pp. 223–230, 2026
• NEMS gate replaces the access transistor in the gain cell
• Goal is high density and energy efficiency with better retention
• Authors: Finnan, Rhee, Ghani and King-Liu