TSMC, ASML eye 12-inch photomasks for full-field High-NA EUV

TSMC and ASML are exploring 12-inch photomasks to unlock the full-field potential of High-NA EUV lithography. The technology targets 2nm and angstrom-era nodes, where 1 nm equals 10 Å.

• 12-inch photomasks enable full-field High-NA EUV exposure
• Technology targets 2nm and angstrom-era nodes
• 1 nm equals 10 Å in the angstrom scale
• TSMC and ASML are working on the transition together