China's CXMT starts mass production of 12nm-class G5 DRAM

China's CXMT has begun mass production using its 5th-generation G5 DRAM process, cutting the active-area half-pitch to 11.95nm with quadruple patterning and reducing the core cell array height to 6,762nm via HKMG. The first devices are 24Gb LPDDR5X chips with 50% more capacity, already shipping in Chinese flagship smartphones.

• G5 active-area half-pitch is 11.95nm, pitch 23.9nm
• Core cell array height cut to 6,762nm using HKMG
• Storage capacitor aspect ratio is about 45:1
• First chips are 24Gb LPDDR5X with 50% more capacity