Lam Research and imec achieve 100% yield for ruthenium interconnects on high-NA EUV

Lam Research and imec reported 100% electrical yield for ruthenium direct metal etch structures at 20nm pitch using a single high-NA EUV exposure. The result validates Lam's Aether dry resist platform as a manufacturable option for chips below the 2nm node.

• 100% yield on fork test structures at 20nm pitch with a single high-NA EUV exposure
• Over 90% yield on meander structures at the same 20nm pitch
• Work was done on an ASML EXE:5200 at imec's Leuven research site
• Lam and imec expanded their collaboration to 3D integration and next-gen memory