Micron to use wafer bonding and High-NA EUV for next-gen DRAM

Micron outlined its DRAM roadmap: the 1δ process enters volume production in the second half of 2027 with a ~20% bit-density gain, followed by wafer bonding in 1ε and High-NA EUV plus new materials in the ζÅ and ηÅ nodes. The company is also developing vertical HBM and vertical edge inference memory with bandwidth starting at 2 TB/s.

• 1δ enters volume production in H2 2027 with a ~20% bit-density increase
• Wafer bonding arrives with 1ε, High-NA EUV with the ζÅ node
• First-gen vEIM targets 2 TB/s at under 1 pJ/bit
• 3D DRAM (3D1, 3D2) ships only when cost and performance justify it