CXMT HBM Yield Near 25% as YMTC XStacking Hybrid Bond Enters DRAM Stack Plans

According to the Korea Semiconductor Industry Association, the memory gap between China and Korea has narrowed to ~3 years for HBM, ~2 years for DRAM, and ~1 year for NAND. CXMT has entered mass production of LPDDR6, but its HBM3 yield remains around 25% due to TSV and multi-layer packaging issues. For DRAM stacking, the company plans to use YMTC's Cu-Cu hybrid bonding XStacking technology.

• China-Korea gap: ~3 years HBM, ~2 years DRAM, ~1 year NAND
• CXMT started mass production of LPDDR6, Xiaomi among first clients
• CXMT HBM3 yield estimated around 25%
• DRAM stack to use YMTC Cu-Cu hybrid bonding XStacking