Hardware1 hOctober 22, 2026, 12:34

Simulation predicts 10,000x terahertz power boost for N-polar GaN transistors

A numerical study of N-polar GaN transistors using Dyakonov-Shur plasma instability predicts up to 1,300 microwatts of room-temperature terahertz emission at a 100 nm gate. That is hundreds of times the sub-2 µW record for Ga-polar structures. The work by CAS Suzhou, NJUST and UESTC researchers appeared in Frontiers of Optoelectronics.

Tech Times

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Simulation predicts 10,000x terahertz power boost for N-polar GaN transistors

N-polar structures reach 2DEG densities up to 5.3×10¹³ cm⁻² versus 1–2×10¹³ for Ga-polar
Contact resistance drops to 0.16 Ω·mm from 0.27–0.35 Ω·mm in Ga-polar devices
Plasma oscillations vanish entirely at a 250 nm gate length
Thickening the channel from 20 to 40 nm shifts frequency up by about 0.6 THz

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