Renesas launches first 100-V GaN FETs with record-low switching FOM

Renesas has introduced its first family of 100-V enhancement-mode GaN power transistors: RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC. The devices deliver up to 35% lower hard-switching FOM and up to 63% lower soft-switching FOM, with on-resistance from 5 mΩ down to 1.2 mΩ. They are available now, targeting AI data centers, humanoid robotics and factory automation.

• Four 100-V GaN FETs with on-resistance from 5 mΩ to 1.2 mΩ
• Hard-switching FOM up to 35% lower, soft-switching FOM up to 63% lower
• Switching losses cut by 40–70%, up to twice the power density
• FCLGA packages keep a silicon-compatible footprint