Renesas samples 650-V GaN FET with dual-side cooling

Renesas is sampling the TP65H020G4PLSGBD, which it calls the industry's first 650-V GaN FET with dual-side cooling for 800-V HVDC AI data-center power conversion. It offers 20-mΩ on-resistance, an 8×8-mm PQFN package that is 57% smaller than TOLT, and is slated for mass production in mid-2027.

• 20-mΩ on-resistance is among the lowest in its class
• Dual-side cooling cuts top-side thermal impedance by 10%
• 8×8-mm PQFN package is 57% smaller than 10×15-mm TOLT
• Mass production is planned for mid-2027