Chinese scientists achieve 10 billion writing cycles in major future memory endurance breakthrough that improves endurance by 100x

A team from Xi'an University with City University of Hong Kong and Fudan University identified the cause of degradation in AlScN ferroelectric memory — mobile nitrogen vacancies. A new structure design achieved 10 billion rewrite cycles, about 100 times the previous limit of 100 million cycles.

• Achieved 10 billion rewrite cycles — 100 times the previous 100 million
• Cause of failures: mobile nitrogen vacancies creating current leakage paths
• AlScN material is compatible with current semiconductor processes
• Results published in the journal Science