Samsung reshuffles DRAM roadmap: B1b hybrid bonding for D0a, HBM5

Samsung Electronics is reshaping its next-generation DRAM roadmap, elevating its B1b wafer-to-wafer hybrid bonding technology from a project-specific development to the core technology behind D0a, its first sub-10nm DRAM. The company is also prioritizing HBM5.

• B1b hybrid bonding becomes core technology for D0a, Samsung's first sub-10nm DRAM
• The technology moves from project-specific development to the roadmap's foundation
• Priority also given to HBM5 memory
• Samsung is revising its next-generation DRAM roadmap