Samsung shifts sub-10nm DRAM roadmap to hybrid bonding

Samsung Electronics has reportedly revised the roadmap for its first sub-10nm DRAM generation, making wafer-to-wafer hybrid bonding the baseline for its D0a process while moving its vertical-channel-transistor (VCT) design to a separate D0a-V variant.

• Wafer-to-wafer hybrid bonding becomes baseline for the D0a process
• VCT design moved to a separate D0a-V variant
• Change concerns the first sub-10nm DRAM generation