Micron skips G10: G11 NAND with 400+ layers ramps in 2H 2027

Micron detailed its next NAND node, G11, skipping G10 entirely. It brings wafer-on-wafer bonding, more than 400 layers, roughly 2x the bit density of G9, up to 1.5x I/O speed and over 25% less energy per bit, with volume ramp in the second half of 2027.

• More than 400 layers with wafer-on-wafer bonding instead of a monolithic stack
• 2x bit density vs G9, up to 1.5x I/O speed, 25% less energy per bit
• Volume ramp scheduled for the second half of 2027
• Micron outlines future data center SSDs of up to 512TB