Micron skips a NAND generation, jumps straight to G11

Micron will skip its planned G10 generation and ship G11 3D-NAND with more than 400 layers in the second half of 2027. Versus G9, G11 doubles bit density, raises I/O speed by up to 1.5x and cuts energy per bit by 25%.

• G11 uses more than 400 layers and wafer-on-wafer bonding
• Bit density doubles versus G9; I/O speed up to 1.5x higher
• 25% less energy needed to transfer a bit
• Volume ramp planned for the second half of 2027