Micron G11 3D NAND targets over 400 layers and 42 Gb/mm² density

Micron is developing G11 3D NAND with more than 400 layers, roughly 42 Gb/mm² bit density and interface speeds up to 5,400 MT/s. It promises up to 50% faster transfers and 25% lower energy per bit than G9. Production is expected to ramp in the second half of 2027, skipping the G10 generation.

• Bit density of 42 Gb/mm² versus the current G9 generation
• Interface speeds up to 5,400 MT/s with 25% lower energy per bit
• G11 production ramp planned for the second half of 2027
• Micron skips G10 and moves directly from G9 to G11