Transistors fabricated in-situ in a tungsten ditelluride monolayer

Researchers led by Seok Young Min converted regions of a WTe2 monolayer into insulating WOx and n-type WS2 and p-type WSe2, producing working MOSFETs without grafting on additional materials. The approach works at the atomic scale and could enable densities beyond standard silicon semiconductors.

• Regions of the WTe2 monolayer were oxidized to WOx and converted to WS2 and WSe2
• Working n- and p-type MOSFETs were built without depositing extra layers
• The method scales to atomic dimensions and may beat silicon density
• Similar work is underway with MoSe2 monolayers and graphene