Wafer-scale monolayer MoS2 transistors with sub-5nm channels demonstrated

Researchers from CMU, the University of Florida, MIT and Texas A&M published a Nature Communications paper on monolayer MoS2 transistors with physical channel lengths below 5 nm. The devices achieved a subthreshold swing of 88 mV/dec and an on/off ratio above 10^6, surpassing silicon's theoretical limit, using a CMOS-compatible process scaled to 4-inch wafers.

• Channel length below 5 nm on monolayer MoS2
• Subthreshold swing of 88 mV/dec and on/off ratio above 10^6
• Performance exceeds silicon's theoretical subthreshold limit
• CMOS-compatible process demonstrated at 4-inch wafer scale