MemSilicon Tapes Out MountTai 2026, a 28nm 1Gb RRAM Chip

Chinese memory startup MemSilicon said it completed tape-out of MountTai 2026, its first-generation high-density RRAM chip, on October 12. Built on a 28nm CMOS process with a 1T4R cell structure, it offers 1Gb per chip, 30Mb per square millimeter density and sub-20ns access latency. The company calls it the world's first high-density, large-capacity RRAM chip of its type, a claim not independently verified.

• Tape-out completed October 12; chip is now in validation
• 28nm CMOS with 1T4R structure: one transistor per four cells
• 1Gb per chip, 30Mb/mm² density, under 20ns access latency
• On-die hardware error correction; targets SoCs, AI PCs and embodied AI