Virtual Fabrication Meets Stress Physics: Solving GAA Channel Non-Uniformity

Engineers at Lam Semiverse Solutions using SEMulator3D showed that mechanical stress in GAA nanosheet channels is distributed unevenly. The difference reaches 400–800 MPa in nFET versus less than 200 MPa in pFET, with top channel thickness as the key factor.

• Stress non-uniformity in nFET reaches 400–800 MPa, in pFET less than 200 MPa
• Top channel thickness (Channel 3) has the greatest impact
• Thickening top channel from 4 to 7 nm significantly reduces stress variation
• Stress non-uniformity distorts carrier mobility, Vt and leakage current