China’s YMTC Is Just 1 Year Behind The West On NAND, While CXMT Trails By Just 2 Years On DRAM And 3 Years On HBM, According To Korea Semiconductor Industry Association

The Korea Semiconductor Industry Association assessed China's memory gap with the West: 1 year in NAND, 2 years in DRAM, and 3 years in HBM. YMTC produces 270-layer NAND versus 300 layers from Samsung and SK hynix, and will move to 400 layers by 2027. CXMT began DDR5 production in 2025 and is already developing LPDDR6, but HBM3E yield is only about 25%.

• NAND gap narrowed to 1 year, DRAM to 2 years, HBM to 3 years
• YMTC produces 270-layer NAND, to move to 400 layers by 2027
• CXMT began DDR5 production in 2025 and is developing LPDDR6
• CXMT HBM3E yield about 25% due to TSV issues