Atomera and IQE sign JDA to advance RF GaN-on-silicon

Atomera and IQE have entered a joint development agreement to bring high-performance, cost-effective RF GaN to market. The partners will demonstrate GaN epitaxy on Atomera's MST-enabled silicon wafers, starting with RF GaN-on-silicon and leaving room to expand into power electronics.

• JDA covers GaN epitaxy on Atomera's MST-enabled silicon wafers
• Initial focus is RF GaN-on-silicon for high-volume RF markets
• Target is best-in-class linearity and loss
• Scope may later expand to power electronics