Micron unveils G11 NAND: 400+ layers, ~2x bit density over G9

Micron announced its Generation 11 (G11) 3D NAND, skipping G10. The memory offers more than 400 layers, roughly double the bit density of G9 and an interface up to 50% faster.

• More than 400 layers in G11 3D NAND
• About 2x the bit density of G9
• Interface up to 50% faster
• G10 generation skipped, a common industry practice