YMTC Develops 4F² DRAM Prototype Running at 9,600 MT/s
YMTC is following CXMT in developing a 4F² DRAM cell prototype with a vertical channel transistor at 9,600 MT/s, with mass production planned at Fab 3. Micron, meanwhile, calls 4F² density gains a "myth" and is betting on 3D DRAM instead.
- YMTC's 4F² prototype uses a VCT transistor at 9,600 MT/s
- Mass production of the 4F² DRAM is planned at Fab 3
- Micron says 4F² has no viable scaling path
- 4F² cuts cell area 30–40% and boosts density 30–50%
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