Scientists model internal conversion in spin defects for quantum sensors

Researchers at UChicago PME built a computational framework that captures the full optical cycle of spin defects in silicon carbide and diamond, including internal conversion. Accounting for the process resolved a long-standing mismatch between predictions and experiments for a divacancy in SiC. The framework is implemented in the open-source WEST code.

• The model covers the full excitation and relaxation cycle of spin defects
• Internal conversion explained the theory-experiment gap for the SiC divacancy
• In diamond, the process dominates energy loss from singlet states
• WEST is open to other labs but remains computationally demanding