Maskless EUV lithography pitched as alternative to e-beam

SemiWiki examines maskless EUV lithography, an approach that defines circuit patterns without a custom photomask, unlike conventional EUV with its 13.5 nm wavelength and reflective optics. It is positioned as an alternative to e-beam lithography.

• Conventional EUV uses 13.5 nm light, reflective optics and a custom photomask
• Maskless approach skips a dedicated mask for each layer
• The method is pitched as an alternative to e-beam lithography