Nvidia unites Samsung and TSMC to build custom HBM base die on 3nm

Nvidia has asked Samsung, Micron and SK hynix to manufacture the base die for its custom NVHBM on TSMC's 3nm node, with the core die moving to the 1c DRAM process. Samsung accepted, abandoning its turnkey approach for the first time while keeping its own foundry as a fallback. Nvidia claims up to 30% more memory bandwidth and 15% lower power draw than HBM4E.

• NVHBM base die will use TSMC's 3nm process
• Core die moves to sixth-generation 1c DRAM
• Nvidia promises +30% bandwidth and −15% power vs HBM4E
• Samsung's foundry loss narrowed from 6.74T to 3.92T won