China Develops GAA Transistors That Enable 3nm Node-Like Performance On DUV Lithography, But MEOL Constraints Only Provide A Path To 5nm Node-Equivalent Performance

The Chinese Academy of Sciences developed GAA transistors with an on/off ratio above 500,000, theoretically enabling 3nm-level performance on older DUV lithography. However, MEOL process constraints limit SMIC to a density of about 137.8 million transistors per mm², matching TSMC's 5nm node.

• On/off ratio of new GAA transistors exceeds 500,000
• Transistors made on DUV lithography without EUV
• MEOL constraints give density about 137.8M tr/mm² — 5nm level
• SMIC can move from 5-track to 4-track M0 to increase density