ETH Zurich and NYU Characterize Power Consumption of Real HBM2 Chips

Researchers at ETH Zürich and NYU published the first comprehensive experimental characterization of power consumption in real HBM2 DRAM chips. Read operations draw significantly higher current, toggling all internal bank group bus signals raises power by 29.4%, and a crafted access pattern increased consumption by 23.6% on average across 36 tested chips.

• First experimental characterization of power in real HBM2 DRAM chips
• Read operations consume significantly higher current than other operations
• Toggling all bank group bus signals raises power by 29.4%
• Crafted access pattern increased power by 23.6% across 36 HBM2 chips