Renesas unveils 650-V dual-side-cooled GaN device for AI data centers

Renesas has launched the 650-V GaN device TP65H020G4PLSGBD with dual-side cooling for power conversion in megawatt-scale AI data center racks. It offers 20 mΩ on-resistance in an 8 x 8 mm PQFN package that is 57% smaller than the existing 10 x 15 mm TOLT package, with top-side thermal impedance cut by 10%.

• 20 mΩ on-resistance, among the lowest in its class
• 8 x 8 mm PQFN package is 57% smaller than the 10 x 15 mm TOLT
• Dual-side cooling lowers top-side thermal impedance by 10%
• Validated on a 6 kW 800 V-to-48 V reference design; shown at OCP Global Summit Oct 12-15, 2026