HBM to take nearly 30% of DRAM capacity by 2027 as Samsung speeds up P5
High-bandwidth memory is expected to account for nearly 30% of DRAM makers' total wafer capacity in 2027, up from about 20% now, per Digitimes. Samsung Electronics is accelerating new memory capacity amid tightening supplies of both HBM and conventional DRAM.
- HBM share of DRAM wafer capacity to rise from ~20% to nearly 30% by 2027
- Samsung is speeding up new memory capacity, including the P5 site
- Drivers are tightening supplies of both HBM and conventional DRAM
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