Hafnium oxide confirmed as true antiferroelectric, stable at 1,562°F

Researchers at the University of Nebraska–Lincoln have confirmed that hafnium oxide (hafnia) has an intrinsic antiferroelectric structure. Films retained the property down to 0.6 nm thickness and survived temperatures up to 1,562°F, opening paths to compact capacitors, memory and solid-state cooling.

• Antiferroelectric structure held in hafnia films as thin as 0.6 nm
• Material withstood heating to 1,562°F (850°C)
• Double hysteresis loop and antiparallel dipoles confirmed
• Hafnia is lead-free, unlike typical antiferroelectrics