CAS Institute of Semiconductors Demonstrates Sliding Ferroelectric Tunnel Junction With Giant TER

The CAS Institute of Semiconductors and partners built a tunnel junction on sliding ferroelectric Cr/h-BN/3R-MoS2/graphene. At a 0.5 V read voltage, it achieved a tunnel electroresistance ratio of 1.9×10^7 and endurance over 10^11 switches. Results published in Science.

• TER 1.9×10^7 at 0.5 V — four orders of magnitude higher than previous analogs
• Endurance over 10^11 switches, switching from 13 ns at 6.5 fJ/bit
• On-state current density 222 A/cm²
• 8×8 array showed stable non-volatile behavior across all 64 cells