Resonac grows 300mm SiC crystal, marking a substrate milestone

Japan's Resonac has grown and processed a 300mm silicon carbide (SiC) single crystal, a step toward mass production of power electronics for electric vehicles, energy, and data centers. Moving from 200mm to 300mm increases chip yield per wafer.

• Resonac produced and processed a 300mm SiC single crystal
• Technology needed for EV and data center power electronics
• Transition to 300mm increases chip yield per wafer