Samsung confirms 4F² VCT DRAM work as CXMT plans 4F² server memory

Samsung confirmed it is developing 4F² VCT DRAM, a vertical-channel transistor design that packs more capacity into the same area. The confirmation came at SEDEX 2026 after Chinese rival CXMT said it would launch 4F² server DRAM by the end of 2026, which had hit Samsung's share price.

• 4F² VCT builds cells vertically to raise density per area
• CXMT plans 4F² server DRAM by the end of 2026
• The industry is expected to move to true 3D DRAM after 4F²
• Samsung has already shown zHBM and zNAND-O